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Fourth Generation GaN Wideband Transistor

Fourth Generation GaN Wideband Transistor
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The MAGX-100027-100C0P is a wideband transistor optimized for DC to 2.7 GHz operation and built using proprietary 4th generation GaN on Silicon (GaN on Si) process. This GaN on Si HEMT D-Mode transistor is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/UHF/L/S-band radar. The unit supports CW, pulsed, and linear operation with output power levels up to 100W (50 dBm). Featuring 50V operation, this device offers CW operation of 18.3 dB gain at 2.45 GHz, and 70% drain efficiency. For pulsed operation, the MAGX-100027-100C0P boasts 18.4 dB gain at 2.7 GHz and 71% drain efficiency. This 100% RF tested transistor is available in an industry standard plastic package with bolt down flange.

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