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GaN-Based MAGb Power Transistors

GaN-Based MAGb Power Transistors
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New plastic-packaged, GaN-based MAGb power transistors provide 320W and 160W output peak power with power efficiency up to 79% — an improvement of up to 10% compared to LDMOS offerings – with only fundamental tuning across the 400 MHz RF bandwidth, and with linear gain of up to 20 dB.

MACOM

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