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GaN-on-SiC HEMT Transistors

GaN-on-SiC HEMT Transistors
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Designed for L-band avionics applications, these high-power GaN-on-SiC HEMT transistors, Models IGN0912L45 and IGN0912L125, supply >45W and >125W of output power at 50V drain bias, with up to 20 dB of gain and 57% of efficiency at 444 x (7us on, 6us off) 22.7% pulse conditions.

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