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GaN Power Amplifier

GaN Power Amplifier
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Model QPA2237 is a wideband amplifier fabricated on the company’s production 0.25um GaN on SiC process. The unit operates from 0.03 to 2.5 GHz and provides 10W of saturated output power with 13 dB of large signal gain and 52% power-added efficiency. The QPA2237 is available in a low cost, surface-mount, 20 lead, 4×4 OVM QFN. It is ideally suited to support both radar and communication applications across defense and commercial markets as well as electronic warfare. It is fully matched to 50 ohms at both RF ports, allowing for simple system integration. DC blocks are required on both RF ports and the drain voltage must be injected through an off chip bias-tee on the RF output port. Lead-free and RoHS compliant.

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