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GaN RF Transistor

GaN RF Transistor
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The QPD1008L is a 125W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz with a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited for military and civilian radar, land mobile and military radio communications, wideband or narrowband amplifiers, jammers, avionics, and test instrumentation. The device can support pulsed, CW, and linear operation. Lead-free and RoHS compliant.

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