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GaN/SiC Long-Pulse Transistor

GaN/SiC Long-Pulse Transistor
100
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Designed for S-band radar applications, this high-power GaN-on-SiC HEMT transistor, model number IGN2731L200, supplies 200W of peak pulsed output power at 46V drain bias, with 14 dB gain and 50% efficiency, at 3 milliseconds, 30% pulse conditions. It boasts a 2.7 to 3.1 GHz instantaneous operating frequency range. Package size is 1.340 (W) x 0.385” (L). Custom versions are available upon request.

INTEGRA TECHNOLOGIES, INC.

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