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GaN/SiC Transistor

GaN/SiC Transistor
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Designed for S-band ISM applications, this high-power, 2.856 GHz, GaN-on-SiC HEMT transistor, model IGN2856S500, supplies 500W of peak pulsed output power at 50V drain bias, with 12 dB of gain and 60% of efficiency at 12us 3% pulse conditions. The company is ISO-certified.

INTEGRA TECHNOLOGIES

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