A new line of low phase noise amplifiers incorporate GaAs HBT MMIC semiconductor technology to deliver ultra-low phase noise performance over a wide dynamic range from 1.5 to 18 GHz. These amplifiers can be used to help optimize the sensitivity and dynamic range of higher performing test, radar and communication receiver designs where performance is dependent on how effectively the smallest and largest signal levels can be processed. Also, for systems that require amplification of weaker signals close to the noise floor, the low phase noise performance of these amplifiers can help reduce unwanted noise and distortion that can inhibit the quality of the transmitted signal. Typical applications include electronic warfare, microwave radio, VSAT, radar, space systems, test instrumentation, and telecom infrastructure. The five new models of low phase noise amplifiers cover select frequency bands ranging from 1.5 to 18 GHz with residual phase noise levels as low as -180 dBc/Hz @ 10 KHz offset. Additional performance specs include small signal gain ranging from 9 to 14 dB, with typical noise figure of 5.5 dB. Psat levels for these amplifiers range from +16 to +25 dBm with Output IP3 levels as high as +34 dBm. All models feature single DC voltage supplies and input/output RF ports are internally matched for 50 ohms with DC blocking capacitors. These compact module assemblies require no external components and are available in rugged Kovar™ metal drop-in packages that are gold-over-nickel-plated and support field replaceable SMA connectors.