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S-Band Radar Transistor

S-Band Radar Transistor
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Using GaN on SiC HEMT technology, part number IGN2731L200 is a S-band radar transistor that features a 2.7 to 3.1 GHz instantaneous operating frequency range. It is an internal impedance pre-matched device specified for use under Class AB operation. Its metal-based package is sealed with a ceramic-epoxy lid and its gold metallization system is Chip – Wire Bond – Package. Package size is 1.340 x 0.385”.

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