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GaN RF Transistor

GaN RF Transistor
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Model QPD1009 is a 15W (P3dB) wideband unmatched discrete GaN on SiC HEMT that operates from DC to 4 GHz and a 50V supply rail. The device is an industry standard 3x3mm plastic overmold package and can support pulsed, CW and linear operations. Applications include military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation.

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