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S-Band GaN Power Amplifier

S-Band GaN Power Amplifier
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QPA1001 is a high-power, S-band amplifier fabricated on the company’s QGaN25 0.25um GaN on SiC production process. Covering 3.1 to 3.5 GHz, the QPA1001 typically provides 48 dBm of saturated output power and 22 dB of large-signal gain while achieving 54% power-added efficiency. The unit can also support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under pulse applications. The QPA1001 is matched to 50 ohms with integrated DC blocking caps on both I/O ports. It utilizes a plastic QFN overmolded package, which is ideal for use in both commercial and military radar systems. 

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