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GaN RF Input-Matched Transistor

GaN RF Input-Matched Transistor
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The QPD1025L is a 1800W (P3dB) discrete GaN on SiC HEMT that operates from 0.96 to 1.215 GHz. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, and test instrumentation. The device can support both CW and pulsed operations. RoHS compliant.

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