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GaN RF Power Transistor

GaN RF Power Transistor
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The QPD0030 is a 45W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 4 GHz on a +48V supply rail. It is ideally suited for base station, radar, and communications applications, and can support both CW and pulsed mode of operations. The unit can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0030 can also be used as a driver in a macrocell base station power amplifier. It is housed in an industry-standard 4x3mm surface mount QFN package, and is lead-free and RoHS compliant. 

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