IN MY OPINION

Future Sparkles for Aluminum-Diamond Heat Spreaders
By Nano Materials International Corp. (NMIC)

About three years ago, I published an article in MPD describing aluminum-diamond metal matrix composites (MMCs) and their unique benefits when used as heat spreaders for GaN devices.
Read More...

FROM WHERE WE SIT

Uncertain Times for DefenseIn Defense of DARPA; Lamenting Bell Labs
By Barry Manz

A federal agency like DARPA is a sitting duck for politicians and assorted other critics. It has come up with some truly bizarre programs over years that ultimately either delivered no tangible results, were canceled before they could cause any damage, or attempted to answer questions that nobody was asking or needed answers to. Read More...


CURRENT ISSUE PRODUCTS


Band Reject Filter Series
Higher frequency band reject (notch) filters are designed to operate over the frequency range of .01 to 28 GHz. These filters are characterized by having the reverse properties of band pass filters and are offered in multiple topologies. Available in compact sizes.
RLC Electronics


SP6T RF Switch
JSW6-33DR+ is a medium power reflective SP6T RF switch, with reflective short on output ports in the off condition. Made using Silicon-on-Insulator process, it has very high IP3, a built-in CMOS driver and negative voltage generator.
Mini-Circuits


Group Delay Equalized Bandpass Filter
Part number 2903 is a group delayed equalized elliptic type bandpass filter that has a typical 1 dB bandwidth of 94 MHz and a typical 60 dB bandwidth of 171 MHz. Insertion loss is <2 dB and group delay variation from 110 to 170 MHz is <3nsec.
KR Electronics


Absorptive Low Pass Filter
Model AF9350 is a UHF, low pass filter that covers the 10 to 500 MHz band and has an average power rating of 400W CW. It incurs a rejection of 45 dB minimum at the 750 to 3000 MHz band, and power rating of 25W CW from 501 to 5000 MHz.
Werlatone


LTE Band 14 Ceramic Duplexer
This high performance LTE ceramic duplexer was designed and built for use in public safety communication and commercial cellular applications. It operates in Band 14 and offers low insertion loss and high isolation to enable clear communications in the LTE network.
Networks International

See all products in this issue


INDUSTRY NEWS
 


Was GaN Work the Cause of Researcher’s Death?

The FBI has been asked by Singapore law enforcement officials to investigate the death of Shane Todd, a scientist working on gallium nitride research in that country. His death was initially ruled a suicide but recent evidence suggests he may have been murdered. Todd’s body was found hanging in his Singapore apartment in June, just a few days before he was to return from Asia and take a job in the U.S. Evidence in his apartment did not didn’t match accounts of his suicide and photos of his body show injuries that could have resulted from a struggle.

Todd received his Ph.D. in electrical engineering from the University of California at Santa Barbara and UCSB engineering professors John Bowers and Robert York have been leading an effort to have the murder theory considered, as they and others feel Todd’s death may be connected to his GaN research.

There have been recent indications that Todd felt his work might compromise U.S. security, according to a report in the February 15 edition of the Financial Times, and York and others apparently feel Todd’s GaN research might have been passed along to Chinese telecom company Huawei via a joint venture with a Singapore government research center called the Institute of Microelectronics (IME), where Todd was employed. IME officials said that while they discussed a partnership with Huawei, nothing formal was developed. Todd’s death drew worldwide media attention because his family traveled to Singapore after his death and found a hard drive in his apartment that contained many files about an IME-Huawei project to develop an advanced GaN
 

 

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MILITARY MICROWAVE DIGEST


MMD March 2014
New Military Microwave Digest
WHITE PAPERS

The Design of Ultra Narrowband Amplifiers Using Small-Signal Varactor Upconverters
This paper presents a method of realizing tunable microwave amplifiers with ultra narrow bandwidths that can be less than 0.5% by the use of a varactor up-converter (UC).
Planar Monolithics

Directivity and VSWR Measurements
Return loss and VSWR measurements are complicated by the finite performance of the directional device used to measure the reflected power. The only accurate and convenient way to make return loss measurements is with a well matched high directivity directional coupler or bridge.
Marki Microwave

Switch Solutions for Systems with Low PIM Requirements
Dow-Key Microwave has invested in R&D for new RF switch products designed specifically to reduce intermodulation (IM) in coaxial switches.
Dow-Key Microwave

How to Specify RF and Microwave Filters
Covers cavity, ceramic, LC, crystal and helical filters.
Anatech Electronics

Mounting Considerations for Medium Power Surface-Mount RF Devices
Covers all factors that must be considered when mounting SMT devices.
TriQuint Semiconductor

Biasing MMIC Amplifiers
How to bias MMICs along with theory and techniques.
Mini-Circuits


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