| June
2004
Pulsed
S-parameter Measurements for GSM Amplifiers
by Christopher K. Horne, RF Micro Devices
Introduction
Many devices, including the GSM power amplifiers used in
cellular handsets, were not designed to operate continuously.
The GSM system operates in the 900 or 1800 MHz bands and
uses Gaussian Minimum Shift Keying (GMSK), which is a type
of digital FM modulation. The output power is measured during
a burst, which is 577 micro-seconds long and repeats every
4.6 milliseconds. Traditional measurement techniques are
not adequate for this type of burst signal. Therefore, pulsed-RF
techniques must be employed during this burst period for
accurate measurements of s-parameters.

Figure 1: Spectrum of a PRF Signal with Spacing
"1/T" Equal to One Over the Pulse Period
This article provides an application guide
to understanding general s-parameter measurements with a
vector network analyzer under pulsed-RF conditions for GSM
power amplifiers. Most modern vector network analyzers have
a receiver and trigger functionality to make such measurements.
A brief description of pulsed-RF measurements, the test
setup for a GSM amplifier and some s-parameter results are
presented.

Figure 2: Timing of External Trigger Pulse to VNA
and GSM RF Burst
Pulsed RF Signals
Most power amplifiers (PAs) are not designed to transmit
with 100 percent duty cycle. If they were, the PA device
would heat up, drawing considerable current. Transistors
tested on a wafer would be subject to extreme heating, causing
thermal stress. To avoid this problem, s-parameter measurements
are often taken with the PA in a pulsed condition.
A pulsed RF signal (PRF) will have a frequency spectrum
composed of a series of spectral lines with an envelope
described by a sinc function (i.e. sin(x)¼x ). The
spacing of the lines ("1 ¼ T ") is set by the PRF
frequency while the envelope shape is fixed by the pulse
width (assuming small rise and fall times to pulse width).
The spacing of the spectral lines is equal to 1¼period
= 1 ¼ T as shown in Figure 1.

Figure 3: Setup for Making PRF Measurements and
Capturing S-parameters for the
RF3110 Power Amplifier
The GSM signal is a 577 micro-second pulse
with a period of 4.6 milliseconds, which equates to a PRF
frequency of approximately 217 Hertz (Hz). This spectrum's
"size" determines how much IF bandwidth (IFBW) is necessary
in the vector network analyzer (VNA) receiver for accurate
PRF measurements. In this case, the entire spectrum can
fit within an IFBW of 1 kHz:
Equation 1
There may be some outlying spectral components at the
edges so some additional averaging may be needed to reduce
the effects of the edge frequency components.
The VNA must be aligned in time with the PRF; otherwise,
all the transmitted s-parameter data points will not be
collected properly. This is the fundamental reason for an
externally "triggered" signal to the VNA.
Triggered Measurements
As shown by Equation 1, the received signal
captured by the VNA fits entirely inside a typical IFBW
(i.e., 1 kHz), which can be set between 1 and 30 kHz in
most VNAs. In the time domain, the sampling needs to occur
during the amplifiers' "on-period" of the pulse in order
to capture the s-parameter data. This is achieved by externally
triggering the VNA to measure the appropriate points in
time. As shown in Figure 2, the external
trigger pulse arrives at the VNA sometime before the RF
pulse in order to account for the "latency" inside the VNA.
"Latency" is the term used to describe the delay from one
transmission point to another. Latency occurs in many electronic
systems where there is a propagation delay between source
and receiver.

Figure 4: Tx-Enable Signal (2 V pulse) Showing the
"Leading" External
Trigger Signal (2.5 Vp-p square wave)
In this case, the VNA requires a delay between its received
external trigger signal and the Tx-Enable signal. According
to Anritsu (1), the delay should be on the order of 50 to
100 micro-seconds although starting later is allowed. The
sampling can begin sometime after the RF pulse has settled
unless the initial data points are of additional interest.
The sampling can continue for a substantial portion of the
pulse but should not continue beyond the end of the pulse.
As a general rule, the IFBW must be greater than "1/pulse
width" to keep sampling from overrunning the pulse (IFBW
= 10 kHz with averaging turned on is acceptable on the Anritsu
MS4623B VNA). Due to pulse settling time, VNA internal filtering
and latency issues, some "safety margin" is required. This
will vary greatly depending on setup and may require some
experimentation. If the IFBW is too small, the sampled s-parameters
will contain some "noise" as a result of not completely
capturing the full GSM burst.

Figure 5: S21 Gain Curves of RF3110: Externally
Triggered VNA (flat top line with marker "3") and Non-pulsed
(internally triggered VNA; narrow-spiked waveform) The "external
trigger rate too fast" message is superficial and only occurs
with the VNA "screen capture" operation.
Measurement Setup
In order to validate the theory, the RF Micro Devices RF3110
quad-band power amplifier will be measured and S11 and S21
s-parameters captured on the Agilent MS4623B Vector Network
Analyzer (VNA) using an Anritsu Display Capture program.
The test setup is shown in Figure 3. It
includes an arbitrary waveform generator (AWG 320) for the
ramp profile and a 2.5 Vp-p square wave trigger signal,
which was used to synchronize the VNA with the Transmit
Enable (Tx-En) signal on the RF3110 (see Figure
4).
In order to achieve a "leading" external trigger signal,
the phase angle of the trigger signal was then changed to
allow "offset" waveforms. The trigger signal should "lead"
the Tx-Enable signal by 50 to 100 usec. A lead time of 70
micro seconds corresponds to a phase setting of 32 degrees
on the AFG 320 arbitrary waveform generator.

Figure 6: S21 Gain Curves of RF3110 from 800 to
4000 MHz: Externally Triggered VNA (flat top line with marker
"3") and Non-pulsed (internally triggered VNA; narrow-spiked
waveform)
A calibrated input signal of -10 dBm was applied to the
input port of the RF3110 evaluation board (EVB). A 20 dB
attenuator was also placed at the output port to avoid saturating
the VNA front end, which accepts a received signal of +5
dBm. DC voltages were also sequentially applied to Vreg
(2.8V) and Band-Select (2 V). A Vramp waveform of 1.4 V
that conforms to the ETSI timing mask was then applied to
the RF3110 in order to take the full-power s-parameter measurements.
S-parameter Measurements
Small-signal measurements of S21 and S11 were taken on the
RF3110. Associated plots are shown in Figures 5,
6 and 7. S21 represents
the actual gain of the device and S11 reveals the input
impedance when the device is turning off and on. Without
using triggered measurements both of these parameters would
not be accurately reported. S22 data is not collected since
it represents the output impedance of the RF3110, which
is meaningless for impedance matching to the antenna.
Figure 5 shows the gain plot for the external
and internal triggered measurement. The top line is the
gain curve for the VNA externally triggered and its markers
are shown to the right (i.e., 32 dB of gain). The default
internally triggered signal shows "spikes," indicating that
the VNA is not capturing the gain (S21) of the transmitted
GSM signal correctly. The "external trigger rate too fast"
message is superficial and only occurs with the VNA "screen
capture" operation.

Figure 7: Input Reflection Coefficient, S11, of
RF3110 from 800 to 4000 MHz: Externally Triggered VNA (orange
curve) and Non-pulsed (internally triggered VNA; green curve)
Figure 6 shows the same plot over larger
frequency band.
The effects of externally triggering the GSM amplifier for
the input reflection coefficient, S11, is shown in Figure
7.
Conclusion
A technique for pulsed S-parameter measurements on GSM amplifiers
has been presented along with some details on how to make
successful measurements using a network analyzer. Plots
of S11 and S21 for a pulsed RF signal with an external and
internal trigger are displayed to show the results of using
the external trigger on the VNA for PRF environments. It
is the hope of the author that this information may be beneficial
to those taking small-signal measurements on devices with
pulsed RF.
References
(1) Anritsu Application Note "Pulsed S-Parameter Measurements,"
February 2003.
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