IN MY OPINION
Two Sides of the DoD Coin: Budgets Slashed, UAV Market Soars

By Fred Ortiz, President
dB Control


As we embark on a new year, imminent cuts to the U.S. Department of Defense (DoD) budget are top of mind for those of us in the military electronics market. At a recent House Armed Services Committee hearing, the nation’s military chiefs cited a $600 billion defense cut as “catastrophic to the military” and having a “severe and irreversible impact.”

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FROM WHERE WE SIT

By Bob Pinato, Owner, ICCS, LLC.

LightSquared:
The Show’s Over
…Or Should Be
By Barry Manz

There are a lot of very technically astute people at the Federal Communications Commission. Many have decades of experience at every level of RF and microwave technology. How then might LightSquared’s proposal for a satellite/terrestrial LTE network have ever gotten past its first hurdle? Even a cursory inspection of the plan, in which the company's network would operate extremely close to GPS frequencies at L-band, makes interference to GPS devices almost a certainty. Read More...


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The R&S FSW signal and spectrum analyzer comes in three models that cover the frequency ranges from 2 kHz to 8 GHz, 13 GHz and 26.5 GHz. The analyzer outperforms all other high-end instruments on the market, with phase noise values that are up to 10 dB lower.

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August 2007

The Doherty Amplifier: New After 70 Years
By Freescale Semiconductor, RF Division

The Doherty amplifier architecture has in less than 5 years become the “amplifier of choice” for new wireless transmitters after essentially laying dormant since W.H. Doherty first described it in 1936. The Doherty’s obscurity is directly attributable to the predominant modulation schemes (AM and FM) employed in communication systems over the years, which do not possess high peak-to-average ratios (PARs). The resurgence of interest in the concept is based on its very high power-added efficiency when amplifying input signals with high PARs – precisely the type exhibited by WCDMA, CDMA2000, and systems employing Orthogonal Frequency Division Multiplexing (OFDM), such as WiMAX and the upcoming Long-Term Evolution (LTE) enhancement to the UMTS wireless standard.

In fact, when properly designed, a Doherty amplifier can produce increases in efficiency of 11% to 14% when compared to standard parallel Class AB amplifiers that have traditionally been employed in wireless base station transmitters. Since the transmitter accounts for a high percentage of overall system power consumption, the cost savings delivered by the Doherty amplifier’s efficiency can reduce base station annual electricity costs. Thus its appeal for wireless base station manufacturers and wireless service providers.

While the intrinsic high efficiency of the Doherty architecture makes it desirable for current and next-generation wireless systems, it presents unique challenges from a design perspective. The linearity and output power of the Doherty architecture are slightly less than exhibited by a dual Class AB amplifier, and it can produce higher distortion as well. Fortunately, the advancements in analog and digital predistortion and feed-forward linearization techniques can dramatically reduce the Doherty’s distortion. In addition, careful amplifier design can mitigate its inherently lower linearity. The remaining challenge is to create RF power transistors that can accommodate the requirements of the two types of amplifiers employed by the Doherty architecture and produce optimum RF output power over a wide array of signal conditions.

A Doherty overview
A “classic” Doherty amplifier (Figure 1) employs two amplifiers. The carrier amplifier is biased to operate in Class AB mode and the peaking amplifier is biased to operate in Class C mode. The input signal is split by a power divider equally to each amplifier with a 90-deg. difference in phase. After the signals are amplified, the signals are recombined with a power combiner. Both amplifiers operate when the input signal peaks, and are each presented with the load impedance that enables maximum power output. However, as the input signal decreases in power, the Class C peaking amplifier turns off and only the Class AB carrier operates. At these lower power levels, the Class AB carrier amplifier is presented with a modulated load impedance that enables higher efficiency and gain. The result is an extremely efficient solution for amplifying the complex modulation schemes employed in current and emerging wireless systems.

FREESCALE SEMICONDUCTOR
www.freescale.com
TXTLINX.COM105
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MILITARY MICROWAVE DIGEST

September 2011

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Mounting Considerations for Medium Power Surface-Mount RF Devices
Covers all factors that must be considered when mounting SMT devices.
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Biasing MMIC Amplifiers
How to bias MMICs along with theory and techniques.
Mini-Circuits


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