IN MY OPINION

Future Sparkles for Aluminum-Diamond Heat Spreaders
By Nano Materials International Corp. (NMIC)

About three years ago, I published an article in MPD describing aluminum-diamond metal matrix composites (MMCs) and their unique benefits when used as heat spreaders for GaN devices.
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MILITARY MICROWAVE DIGEST


MMD March 2014
New Military Microwave Digest

ON THE MARKET


Band Reject Filter Series
Higher frequency band reject (notch) filters are designed to operate over the frequency range of .01 to 28 GHz. These filters are characterized by having the reverse properties of band pass filters and are offered in multiple topologies. Available in compact sizes.
RLC Electronics


SP6T RF Switch
JSW6-33DR+ is a medium power reflective SP6T RF switch, with reflective short on output ports in the off condition. Made using Silicon-on-Insulator process, it has very high IP3, a built-in CMOS driver and negative voltage generator.
Mini-Circuits


Group Delay Equalized Bandpass Filter
Part number 2903 is a group delayed equalized elliptic type bandpass filter that has a typical 1 dB bandwidth of 94 MHz and a typical 60 dB bandwidth of 171 MHz. Insertion loss is <2 dB and group delay variation from 110 to 170 MHz is <3nsec.
KR Electronics


Absorptive Low Pass Filter
Model AF9350 is a UHF, low pass filter that covers the 10 to 500 MHz band and has an average power rating of 400W CW. It incurs a rejection of 45 dB minimum at the 750 to 3000 MHz band, and power rating of 25W CW from 501 to 5000 MHz.
Werlatone


LTE Band 14 Ceramic Duplexer
This high performance LTE ceramic duplexer was designed and built for use in public safety communication and commercial cellular applications. It operates in Band 14 and offers low insertion loss and high isolation to enable clear communications in the LTE network.
Networks International

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November 2012

For Better SWaP, Choose GaN
By David Silvius, Director, Strategic Marketing
Richardson RFPD

Today’s GaN-based products are rising to the challenge of rapidly evolving demands for size, reliability, linearity, power density and energy efficiency, by providing RF system engineers with the flexibility to achieve significantly higher power and efficiency, with lower part count, board space and resultant cost.

GaN technology is suited to meet today’s size, weight and power (“SWaP”) demands better than older technologies like GaAs because GaN offers:

• Higher power densities leading to reduced combining losses for a given power target
• Increased efficiency over frequency
• Ability to maintain high performance over wide bandwidths
• Higher thermal conductivity / lower thermal resistance (GaN on SiC)

And GaN is branching out to encompass more than power amplification. For example, TriQuint Semiconductor’s new GaN-based switches are capable of achieving up to five-times the power handling as GaAs. And GaN has better thermal properties than competing GaAs technologies. Thermal conductivity for SiC is roughly 4x that of GaAs. An added benefit is that GaN can support the million hour MTTF reliability benchmark at a junction temperature of 200°C or higher versus 150°C for GaAs. These thermal advantages do not solve the thermal problem at the system level; however, they bring the thermal management concern down to a reasonable design trade-off for the system engineer.

GaN switches achieve high levels of power handling in a small form factor, particularly versus insertion loss. For example, a 3 Watt GaAs switch at 6 GHz may have about 2 dB insertion loss, whereas a 40 Watt GaN switch at 6 GHz may have less than 1 dB insertion loss for the same amount of isolation. Additionally, GaN switches require very low current — measured in micro-amps (μA) as opposed to milliamps or even amps for pin switches. And because GaN essentially brings more power per mm2 to the table, small but higher power-handling components are needed to switch that level of power. TriQuint’s TGS2351-SM, for example, can switch 40W, as compared to GaAs FET-based switches which can typically switch between 3 and 10 Watts in a similar board space.

To date, the defense industry has benefitted most from advances in GaN technology, primarily due to the pulse and continuous wave GaN power devices from sup­pliers like M/A-COM Tech, Microsemi, Nitronex, TriQuint, and UMS.Applications include radar, EW and communications all of which require the output power versus size advantage that is only available through GaN. There is also plenty of GaN development in the works for commercial markets like weather and marine radar, CATV, and cellular infrastructure. For these applications, cost is a bigger driver than it is for defense applications; but as the cost of GaN is coming down, it is certainly more of an option today than it was just two years ago. Even today, GaN offers cost benefits over other technologies when viewed in terms of dollars-per-watt, as opposed to the standard dollars-per-square-millimeter comparison. As the frequency increases from S-band and X-band to Ku-band, GaN’s dollars-per-watt cost offers a markedly better value than GaAs and other existing technologies, both now and in the years ahead.

Richardson RFPD
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FROM WHERE WE SIT

Uncertain Times for DefenseIn Defense of DARPA; Lamenting Bell Labs
By Barry Manz

A federal agency like DARPA is a sitting duck for politicians and assorted other critics. It has come up with some truly bizarre programs over years that ultimately either delivered no tangible results, were canceled before they could cause any damage, or attempted to answer questions that nobody was asking or needed answers to. Read More...


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