IN MY OPINION

Future Sparkles for Aluminum-Diamond Heat Spreaders
By Nano Materials International Corp. (NMIC)

About three years ago, I published an article in MPD describing aluminum-diamond metal matrix composites (MMCs) and their unique benefits when used as heat spreaders for GaN devices.
Read More...

MILITARY MICROWAVE DIGEST


MMD March 2014
New Military Microwave Digest

ON THE MARKET


Band Reject Filter Series
Higher frequency band reject (notch) filters are designed to operate over the frequency range of .01 to 28 GHz. These filters are characterized by having the reverse properties of band pass filters and are offered in multiple topologies. Available in compact sizes.
RLC Electronics


SP6T RF Switch
JSW6-33DR+ is a medium power reflective SP6T RF switch, with reflective short on output ports in the off condition. Made using Silicon-on-Insulator process, it has very high IP3, a built-in CMOS driver and negative voltage generator.
Mini-Circuits


Group Delay Equalized Bandpass Filter
Part number 2903 is a group delayed equalized elliptic type bandpass filter that has a typical 1 dB bandwidth of 94 MHz and a typical 60 dB bandwidth of 171 MHz. Insertion loss is <2 dB and group delay variation from 110 to 170 MHz is <3nsec.
KR Electronics


Absorptive Low Pass Filter
Model AF9350 is a UHF, low pass filter that covers the 10 to 500 MHz band and has an average power rating of 400W CW. It incurs a rejection of 45 dB minimum at the 750 to 3000 MHz band, and power rating of 25W CW from 501 to 5000 MHz.
Werlatone


LTE Band 14 Ceramic Duplexer
This high performance LTE ceramic duplexer was designed and built for use in public safety communication and commercial cellular applications. It operates in Band 14 and offers low insertion loss and high isolation to enable clear communications in the LTE network.
Networks International

See all products in this issue


July 2014

Hittite’s Wideband (Distributed) Power Amplifiers Span DC to 65 GHz
By Hittite Microwave

Hittite’s Distributed Amplifiers are some of the very best in the industry. Hittite now offers over 40 high performance distributed amplifier products which span the frequency range from DC to 65 GHz with a wide range of output power levels. Available in bare die, leadless plastic and ceramic SMT packages and low thermal resistance ceramic air cavity packages, these amplifiers are ideal for test and measurement equipment or for wideband commercial, scientific and military transmitter and receiver systems. These amplifiers also demonstrate superior 2nd harmonic properties as well as a high Third Order Intercept. They are also excellent as LO drivers for Hittite’s broad range of mixer products.

Figure 1: Hittite Microwave’s Wideband Amplifier products cover applications from DC to 65 GHz

High performance wideband amplifiers that combine low noise figure, high linearity, and temperature stability along with solid power and gain levels are essential to leading edge microwave systems. Table 1 summarizes the specifications for selected high performance distributed amplifiers which cover the frequency range from 10 MHz to 48 GHz. Figure 2 demonstrates superior P1dB performance vs. operating frequency range. Ideal for use in broadband communications, instrumentation, lab and test applications, these wideband MMIC amplifier products feature fully matched (50 Ohm), unconditionally stable DC blocked amplifiers.

Table 1: A Selection of Hittite’s High Performance Wideband (Distributed) Amplifiers

High Performance Wideband Amplifiers
The HMC994LP5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 28 GHz. The amplifier provides 13 dB of gain, +29 dBm of saturated output power, and 23% PAE from a +10V supply. With up to +38 dBm Output IP3, the HMC994LP5E delivers superior high linearity performance.

Figure 2: P1dB vs. Operating Frequency Range for Selected Wideband (Distributed) Amplifiers

The HMC998LP5E is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between 100 MHz and 20 GHz. The amplifier provides 11 dB of gain, +41 dBm output IP3, and +31 dBm of output power at 1 dB gain compression while requiring only 500 mA from a +15V supply. The HMC994LP5E and the HMC998LP5 both exhibit very flat gain from 4 to 16 GHz and from 3 to 17 GHz respectively, making them ideal for EW, ECM, radar and test equipment applications.

Both the HMC994LP5E and the HMC998LP5E are supplied in leadless QFN 5 x 5 mm surface mount packages and feature I/Os that are internally matched to 50 Ohms.

The HMC994LP5E and HMC998LP5E amplifiers are both available in bare die form as the HMC994 and HMC998. Requiring only a few external bias decoupling components, the HMC994 and HMC998 amplifiers were developed for simplified integration into Multi-Chip Modules (MCMs) and other higher level assemblies and subsystems.

Figure 3: HMC998 OIP3 Characteristic

The HMC998 die also offers excellent OIP3 and 2nd harmonic performance. Figures 3 and 4 show that the HMC998 die achieves an OIP3 of 42 dBm and 2nd harmonic performance of 34 dBc with output power of 18 dBm.

OIP3 and 2nd harmonic performance for the HMC994 die is shown in Figures 5 and 6.
The HMC797 and HMC907 dies are GaAs pHEMT MMIC Power Amplifiers for military EW, space, and test & measurement equipment applications from DC to 22 GHz.

The HMC797 is a 1 Watt Power Amplifier die which is rated from DC to 22 GHz, and delivers 14.5 dB gain, +31 dBm saturated output power, and +40 dBm output IP3. The HMC797 also exhibits a positive gain slope from DC to 22 GHz, making it ideal for subsystems applications. The die consumes 400 mA from a +10 V supply and occupies only 4.48 mm2.

Figure 4: HMC998 Second Harmonic Characteristic

The HMC907 is a GaAs pHEMT MMIC Power Amplifier chip which is self-biased and is rated from 0.2 to 22 GHz. It delivers 14 dB of gain, +29.5 dBm saturated output power, and +38 dBm output IP3. Gain flatness for the HMC907 is excellent at ±0.6 dB from DC to 12 GHz. The HMC907 consumes 350 mA from a +10V supply and occupies only 3.87 mm2. Both chips feature RF I/Os that are matched to 50 Ohms, which facilitates integration into Multi-Chip Modules (MCMs).

Figure 5: HMC994 OIP3 Characteristic

For applications where an SMT compatible solution is preferred, the HMC797LP5E and HMC907LP5E offer similar performance to the HMC797 and HMC907, respectively. The HMC797LP5E provides 13.5 dB of gain, +39 dBm output IP3, and +28 dBm of output power at 1 dB gain compression, while the HMC907LP5E provides 12 dB of gain, +36 dBm output IP3 and +26 dBm of output power at 1 dB gain compression. The HMC797LP5E and HMC907LP5E are housed in RoHS compliant 5x5 mm leadless QFN SMT packages.

The HMC797 and HMC907 die products and the HMC797LP5E and HMC907LP5E SMT packaged products are specified for operation over the -55 °C to +85 °C temperature range.

Figure 6: HMC994 Second Harmonic Characteristic

The HMC1022 is a 0.25 Watt GaAs pHEMT MMIC Distributed Power Amplifier die which operates between DC and 48 GHz. The amplifier provides 12 dB of gain, +32 dBm output IP3 and +22 dBm of output power at 1 dB gain compression while consuming only 150 mA from a +10V supply. The HMC1022 exhibits a slightly positive gain slope from 10 to 35 GHz, making it ideal for EW, ECM, radar and test equipment applications. The HMC1022 features RF I/Os which are internally matched to 50 Ohms and requires only a few external bias decoupling components.

The HMC930 is a GaAs pHEMT MMIC Distributed Power Amplifier die which operates between DC and 40 GHz, and delivers up to 13 dB of gain, +33.5 dBm output IP3 and +22 dBm of output power at 1 dB gain compression. The input and output return losses of the HMC930 are better than 12 dB and 16 dB, respectively, across the band. The gain flatness is excellent at ±0.3 dB from 12 to 32 GHz, while a slightly positive gain slope in this same band makes the HMC930 ideal for microwave radio, and military EW and ECM applications. This compact power amplifier die occupies less than 4.25 mm2, consumes only 175 mA from a +10V supply, and is specified for operation over the full -55 to +85 ºC temperature range.

Figure 7: Noise Figure vs. Frequency of the HMC1049 Wideband Low Noise Amplifier Die

The HMC5805LS6 is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between DC and 40 GHz. The amplifier provides 13 dB of gain, 33 dBm output IP3 and +22 dBm of output power at 1 dB gain compression while requiring 175 mA from a +10V supply. The HMC5805LS6 exhibits a slightly positive gain slope from 8 to 32 GHz, making it ideal for EW, ECM, radar and test equipment applications. The HMC5805LS6 amplifier I/Os are internally matched to 50 Ohms. The amplifier requires no external matching components and is housed in ceramic air cavity package which exhibits low thermal resistance and is compatible with surface mount manufacturing techniques. The HMC5805LS6 amplifier is ideal for new designs requiring DC to 40 GHz frequency coverage and can be used with many of Hittite’s advanced mixers, switches, phase shifters, voltage variable attenuators and power detectors.

Unique Wideband LNAs
Hittite’s distributed amplifier product line also includes some very unique distributed Low Noise Amplifiers (LNAs). For example, the HMC1049 is a GaAs MMIC pHEMT Low Noise Amplifier die which operates between 300 MHz and 20 GHz and employs a novel topology which maintains an excellent low noise figure of 1.7 dB at low frequencies (Figure 7). The amplifier also delivers 16 dB of small signal gain and Output IP3 of +27 dBm (Figure 8), while requiring only 70 mA from a +7V supply. The P1dB output power of +16 dBm enables the LNA to function as a LO driver for balanced, I/Q or image reject mixers. The HMC1049 is internally matched to 50 Ohms for ease of integration into Multi–Chip Modules (MCMs).

Figure 8: HMC1049 OIP3 Characteristic.

Offering similar low noise performance, the HMC1049 LNA is also available in a plastic 5 x 5 mm QFN packaged version as the HMC1049LP5E.

Other unique Low Noise Amplifiers include the HMC753LP4E and the HMC-AUH312. The HMC753LP4E LNA operates from 1 to 11 GHz, provides up to 16.5 dB of small signal gain, and 1.5 dB noise figure over the 1 to 6 GHz frequency range (Figures 9 and 10).

The HMC-AUH312 is a GaAs MMIC HEMT Distributed Driver Amplifier die which operates between 500 MHz and 65 GHz while providing a typical 3 dB bandwidth in excess of 65 GHz. This amplifier provides 10 dB of small signal gain and maximum output amplitude of 2.5V peak- to-peak, which makes it ideal for use in broadband wireless, fiber optic communications and test equipment applications. All three of these LNAs provide high enough P1dB output power to function as LO drivers for Hittite’s wide range of balanced, I/Q or image reject mixers.

Figure 9: HMC753LP4E Noise Figure Performance

Distributed Amplifier Biasing & Optimization
To get the best possible performance from Hittite’s distributed amplifiers, solid biasing techniques must be used. To understand all of the factors associated with biasing these amplifiers, Hittite has developed a training video. The video explains key considerations and techniques required to correctly bias and optimize the amplifiers for maximum performance over their intended operating frequency ranges. Topics covered include: drain biasing, biasing vg2, AC Ground capacitors, RF input/output broadband blocks and recommended biasing sequence.

Figure 10: HMC753LP4E Gain Characteristic

The video also features a live bench demonstration that examines the effects of removing various types of “AC Ground” capacitors from an ideally biased HMC797, DC-22 GHz wideband power amplifier. To access the video, go to www.hittite.com and click on the Wideband (Distributed) Amplifier tab. Alternatively, the video can be viewed at digikey.com within the Hittite Supplier page.

Summary
Hittite Microwave offers over 40 industry-leading Wideband (Distributed) Power Amplifiers. A selection of the most compelling distributed amplifiers and LNAs delivering output power levels up to 31 dBm and serving applications in the DC to 48 GHz range have been presented. In the coming months, Hittite will continue to expand its wideband power amplifier product line with new offerings. To support early prototype engineering activities, visit digikey.com today for Hittite power amplifier die and packaged product samples, datasheets and evaluation boards. Alternatively, visit hittite.com or call your local sales representative for information.

Hittite Microwave
www.hittite.com
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FROM WHERE WE SIT

Uncertain Times for DefenseIn Defense of DARPA; Lamenting Bell Labs
By Barry Manz

A federal agency like DARPA is a sitting duck for politicians and assorted other critics. It has come up with some truly bizarre programs over years that ultimately either delivered no tangible results, were canceled before they could cause any damage, or attempted to answer questions that nobody was asking or needed answers to. Read More...


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