Hittite’s Wideband (Distributed) Power Amplifiers Span DC to 65 GHz
By Hittite Microwave
Hittite’s Distributed Amplifiers are some of the very best in the industry. Hittite now offers over 40 high performance distributed amplifier products which span the frequency range from DC to 65 GHz with a wide range of output power levels. Available in bare die, leadless plastic and ceramic SMT packages and low thermal resistance ceramic air cavity packages, these amplifiers are ideal for test and measurement equipment or for wideband commercial, scientific and military transmitter and receiver systems. These amplifiers also demonstrate superior 2nd harmonic properties as well as a high Third Order Intercept. They are also excellent as LO drivers for Hittite’s broad range of mixer products.
High performance wideband amplifiers that combine low noise figure, high linearity, and temperature stability along with solid power and gain levels are essential to leading edge microwave systems. Table 1 summarizes the specifications for selected high performance distributed amplifiers which cover the frequency range from 10 MHz to 48 GHz. Figure 2 demonstrates superior P1dB performance vs. operating frequency range. Ideal for use in broadband communications, instrumentation, lab and test applications, these wideband MMIC amplifier products feature fully matched (50 Ohm), unconditionally stable DC blocked amplifiers.
High Performance Wideband Amplifiers
The HMC994LP5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 28 GHz. The amplifier provides 13 dB of gain, +29 dBm of saturated output power, and 23% PAE from a +10V supply. With up to +38 dBm Output IP3, the HMC994LP5E delivers superior high linearity performance.
The HMC998LP5E is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between 100 MHz and 20 GHz. The amplifier provides 11 dB of gain, +41 dBm output IP3, and +31 dBm of output power at 1 dB gain compression while requiring only 500 mA from a +15V supply. The HMC994LP5E and the HMC998LP5 both exhibit very flat gain from 4 to 16 GHz and from 3 to 17 GHz respectively, making them ideal for EW, ECM, radar and test equipment applications.
Both the HMC994LP5E and the HMC998LP5E are supplied in leadless QFN 5 x 5 mm surface mount packages and feature I/Os that are internally matched to 50 Ohms.
The HMC994LP5E and HMC998LP5E amplifiers are both available in bare die form as the HMC994 and HMC998. Requiring only a few external bias decoupling components, the HMC994 and HMC998 amplifiers were developed for simplified integration into Multi-Chip Modules (MCMs) and other higher level assemblies and subsystems.
The HMC998 die also offers excellent OIP3 and 2nd harmonic performance. Figures 3 and 4 show that the HMC998 die achieves an OIP3 of 42 dBm and 2nd harmonic performance of 34 dBc with output power of 18 dBm.
OIP3 and 2nd harmonic performance for the HMC994 die is shown in Figures 5 and 6.
The HMC797 and HMC907 dies are GaAs pHEMT MMIC Power Amplifiers for military EW, space, and test & measurement equipment applications from DC to 22 GHz.
The HMC797 is a 1 Watt Power Amplifier die which is rated from DC to 22 GHz, and delivers 14.5 dB gain, +31 dBm saturated output power, and +40 dBm output IP3. The HMC797 also exhibits a positive gain slope from DC to
22 GHz, making it ideal for subsystems applications. The die consumes 400 mA from a +10 V supply and occupies only 4.48 mm2.
The HMC907 is a GaAs pHEMT MMIC Power Amplifier chip which is self-biased and is rated from 0.2 to 22 GHz. It delivers 14 dB of gain, +29.5 dBm saturated output power, and +38 dBm output IP3. Gain flatness for the HMC907 is excellent at ±0.6 dB from DC to
12 GHz. The HMC907 consumes
350 mA from a +10V supply and occupies only 3.87 mm2. Both chips feature RF I/Os that are matched to 50 Ohms, which facilitates integration into Multi-Chip Modules (MCMs).
For applications where an SMT compatible solution is preferred, the HMC797LP5E and HMC907LP5E offer similar performance to the HMC797 and HMC907, respectively. The HMC797LP5E provides 13.5 dB of gain, +39 dBm output IP3, and +28 dBm of output power at 1 dB gain compression, while the HMC907LP5E provides
12 dB of gain, +36 dBm output IP3 and +26 dBm of output power at 1 dB gain compression. The HMC797LP5E and HMC907LP5E are housed in RoHS compliant 5x5 mm leadless QFN SMT packages.
The HMC797 and HMC907 die products and the HMC797LP5E and HMC907LP5E SMT packaged products are specified for operation over the -55 °C to +85 °C temperature range.
The HMC1022 is a
0.25 Watt GaAs pHEMT MMIC Distributed Power Amplifier die which operates between DC and 48 GHz. The amplifier provides 12 dB of gain, +32 dBm output IP3 and +22 dBm of output power at 1 dB gain compression while consuming only 150 mA from a +10V supply. The HMC1022 exhibits a slightly positive gain slope from 10 to 35 GHz, making it ideal for EW, ECM, radar and test equipment applications. The HMC1022 features RF I/Os which are internally matched to 50 Ohms and requires only a few external bias decoupling components.
The HMC930 is a GaAs pHEMT MMIC Distributed Power Amplifier die which operates between DC and
40 GHz, and delivers up to 13 dB of gain, +33.5 dBm output IP3 and +22 dBm of output power at 1 dB gain compression. The input and output return losses of the HMC930 are better than 12 dB and 16 dB, respectively, across the band. The gain flatness is excellent at ±0.3 dB from 12 to 32 GHz, while a slightly positive gain slope in this same band makes the HMC930 ideal for microwave radio, and military EW and ECM applications. This compact power amplifier die occupies less than 4.25 mm2, consumes only 175 mA from a +10V supply, and is specified for operation over the full -55 to +85 ºC temperature range.
The HMC5805LS6 is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between DC and 40 GHz. The amplifier provides 13 dB of gain, 33 dBm output IP3 and +22 dBm of output power at 1 dB gain compression while requiring 175 mA from a +10V supply.
The HMC5805LS6 exhibits a slightly positive gain slope from 8 to 32 GHz, making it ideal for EW, ECM, radar and test equipment applications. The HMC5805LS6 amplifier I/Os are internally matched to 50 Ohms. The amplifier requires no external matching components and is housed in ceramic air cavity package which exhibits low thermal resistance and is compatible with surface mount manufacturing techniques. The HMC5805LS6 amplifier is ideal for new designs requiring DC to 40 GHz frequency coverage and can be used with many of Hittite’s advanced mixers, switches, phase shifters, voltage variable attenuators and power detectors.
Unique Wideband LNAs
Hittite’s distributed amplifier product line also includes some very unique distributed Low Noise Amplifiers (LNAs). For example, the HMC1049 is a GaAs MMIC pHEMT Low Noise Amplifier die which operates between 300 MHz and 20 GHz and employs a novel topology which maintains an excellent low noise figure of 1.7 dB at low frequencies (Figure 7). The amplifier also delivers 16 dB of small signal gain and Output IP3 of +27 dBm (Figure 8), while requiring only 70 mA from a +7V supply. The P1dB output power of +16 dBm enables the LNA to function as a LO driver for balanced, I/Q or image reject mixers. The HMC1049 is internally matched to 50 Ohms for ease of integration into Multi–Chip Modules (MCMs).
Offering similar low noise performance, the HMC1049 LNA is also available in a plastic 5 x 5 mm QFN packaged version as the HMC1049LP5E.
Other unique Low Noise Amplifiers include the HMC753LP4E and the HMC-AUH312. The HMC753LP4E LNA operates from 1 to 11 GHz, provides up to 16.5 dB of small signal gain, and 1.5 dB noise figure over the 1 to 6 GHz frequency range (Figures 9 and 10).
The HMC-AUH312 is a GaAs MMIC HEMT Distributed Driver Amplifier die which operates between 500 MHz and 65 GHz while providing a typical 3 dB bandwidth in excess of 65 GHz. This amplifier provides 10 dB of small signal gain and maximum output amplitude of 2.5V peak- to-peak, which makes it ideal for use in broadband wireless, fiber optic communications and test equipment applications. All three of these LNAs provide high enough P1dB output power to function as LO drivers for Hittite’s wide range of balanced, I/Q or image reject mixers.
Distributed Amplifier Biasing & Optimization
To get the best possible performance from Hittite’s distributed amplifiers, solid biasing techniques must be used. To understand all of the factors associated with biasing these amplifiers, Hittite has developed a training video. The video explains key considerations and techniques required to correctly bias and optimize the amplifiers for maximum performance over their intended operating frequency ranges. Topics covered include: drain biasing, biasing vg2, AC Ground capacitors, RF input/output broadband blocks and recommended biasing sequence.
The video also features a live bench demonstration that examines the effects of removing various types of “AC Ground” capacitors from an ideally biased HMC797, DC-22 GHz wideband power amplifier. To access the video, go to www.hittite.com and click on the Wideband (Distributed) Amplifier tab. Alternatively, the video can be viewed at digikey.com within the Hittite Supplier page.
Hittite Microwave offers over 40 industry-leading Wideband (Distributed) Power Amplifiers. A selection of the most compelling distributed amplifiers and LNAs delivering output power levels up to 31 dBm and serving applications in the DC to 48 GHz range have been presented. In the coming months, Hittite will continue to expand its wideband power amplifier product line with new offerings. To support early prototype engineering activities, visit digikey.com today for Hittite power amplifier die and packaged product samples, datasheets and evaluation boards. Alternatively, visit hittite.com or call your local sales representative for information.
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