Home Tag "INTEGRA TECHNOLOGIES"

Integra Launches New Brand Identity and Website

Integra Technologies, a leading designer and supplier of high-power RF Power Transistors and RF Power Modules, announces the launch of their new brand identity and redesigned website. In addition to announcing several products this month at the International Microwave Symposium (IMS), Integra has taken the opportunity of the show to announce their new brand identity […]

Matched Power Transistor Options

A pair of 135W and 130W GaN-on-SiC transistors for S-band radar applications has just been introduced. IGT2731M130 is a 50 ohm matched high power GaN HEMT transistor, supplying a minimum of 130W of peak pulsed power, gain of 13.5 dB, and a drain efficiency of 55%, at pulse conditions of 300 microseconds/1% duty cycle. The […]

S-Band Radar Transistor

Using GaN on SiC HEMT technology, part number IGN2731L200 is a S-band radar transistor that features a 2.7 to 3.1 GHz instantaneous operating frequency range. It is an internal impedance pre-matched device specified for use under Class AB operation. Its metal-based package is sealed with a ceramic-epoxy lid and its gold metallization system is Chip […]

GaN/SiC Transistor

Designed for S-band ISM applications, this high-power, 2.856 GHz, GaN-on-SiC HEMT transistor, model IGN2856S500, supplies 500W of peak pulsed output power at 50V drain bias, with 12 dB of gain and 60% of efficiency at 12us 3% pulse conditions. The company is ISO-certified. INTEGRA TECHNOLOGIES (60)

GaN/SiC Transistor

The IGN3842M130, a 130W, 3.8 to 4.2 GHz GaN/SiC transistor, was designed for low C-band applications. It supplies 145W of typical peak pulsed output power at 50V drain bias, with 14 dB of gain and 57% of efficiency at 100us-2% pulse conditions. It comes in a metal based package sealed with a ceramic epoxy lid. […]

GaN/SiC Transistor

Model IGN2856S500, designed for S-band ISM applications, is a high-power GaN-on-SiC HEMT transistor that supplies 500W of peak pulsed output power at 50V drain bias, with 12 dB of gain and 60% of efficiency at 12us 3% pulse conditions. The company is ISO-certified. INTEGRA TECHNOLOGIES (26)

GaN-on-SiC HEMT Transistors

Designed for L-band avionics applications, these high-power GaN-on-SiC HEMT transistors, Models IGN0912L45 and IGN0912L125, supply >45W and >125W of output power at 50V drain bias, with up to 20 dB of gain and 57% of efficiency at 444 x (7us on, 6us off) 22.7% pulse conditions. INTEGRA TECHNOLOGIES (48)

Unmatched Broadband Transistor

The IGN0160UM10, a GaN-on-SiC unmatched broadband transistor, operates in the frequency range from 100 to 6000 MHz. Under CW (continuous wave) conditions, it supplies a minimum of 10W of output power at 3 GHz with typically >18 dB gain and 50% efficiency from a 50V supply voltage. INTEGRA TECHNOLOGIES (19)