Home Tag "INTEGRA TECHNOLOGIES"

GaN/SiC RF Power Modules

A new line of ultra-efficient RF power modules offers a new level of integration that results in powerful yet simple, higher-level building blocks for creating SWaP-C optimized high power amplifiers (HPAs) found in pulsed and CW radar systems. Built-in functions can include RF matching, gate-pulsing and sequencing (GPS), output noise suppression, temperature compensation, and VSWR […]

GaN/SiC RF Power Transistor

The IGT5259CW25 is a fully-matched (to 50 ohms), GaN/SiC RF power transistor that is ideal for C-band continuous wave (CW) applications. It operates at the instantaneous frequency range of 5.2 to 5.9 GHz and offers a minimum of 25W of output power at 36V drain bias, featuring 12 dB of gain and 48% efficiency at […]

Integra Launches New Brand Identity and Website

Integra Technologies, a leading designer and supplier of high-power RF Power Transistors and RF Power Modules, announces the launch of their new brand identity and redesigned website. In addition to announcing several products this month at the International Microwave Symposium (IMS), Integra has taken the opportunity of the show to announce their new brand identity […]

Matched Power Transistor Options

A pair of 135W and 130W GaN-on-SiC transistors for S-band radar applications has just been introduced. IGT2731M130 is a 50 ohm matched high power GaN HEMT transistor, supplying a minimum of 130W of peak pulsed power, gain of 13.5 dB, and a drain efficiency of 55%, at pulse conditions of 300 microseconds/1% duty cycle. The […]

S-Band Radar Transistor

Using GaN on SiC HEMT technology, part number IGN2731L200 is a S-band radar transistor that features a 2.7 to 3.1 GHz instantaneous operating frequency range. It is an internal impedance pre-matched device specified for use under Class AB operation. Its metal-based package is sealed with a ceramic-epoxy lid and its gold metallization system is Chip […]

GaN/SiC Transistor

The IGN3842M130, a 130W, 3.8 to 4.2 GHz GaN/SiC transistor, was designed for low C-band applications. It supplies 145W of typical peak pulsed output power at 50V drain bias, with 14 dB of gain and 57% of efficiency at 100us-2% pulse conditions. It comes in a metal based package sealed with a ceramic epoxy lid. […]