Home Tag "INTEGRA TECHNOLOGIES"

Fully Matched Transistor

IGT5259CW25 is fully matched to 50 ohms and operates at 5.2 to 5.9 GHz of instantaneous operating frequency range, a minimum of 25W of output power, and 36V drain bias. It features 12 dB of gain, and 48% efficiency at CW conditions. Featuring GaN-on-SiC technology, the unit is 100% high power RF tested. INTEGRA TECHNOLOGIES […]

High Power IFF Transistor for L-Band

Designed for IFF avionic applications, IGN1011L120 is a high power GaN transistor, specified for use under Class AB operation. This transistor operates at 1.03 to 1.09 GHz, and supplies a minimum of 120W of peak pulse power at 50V bias voltage and 6.4% duty factor. This 100% high power RF tested transistor for new designs […]

L-Band RF Power Amplifier Module

IGNP1011L2400 is a high power GaN-on-SiC RF power amplifier module/pallet that has been designed specifically for IFF/SSR systems operating under either Mode S ELM (48x {32µs on, 18µs off}. 6.4% Long Term Duty Cycle) or standard Mode S (128µs, 2% Duty Cycle) pulse conditions. It supplies a minimum of 2200W of peak output power, with […]

GaN-on-SiC Transistors 

A pair of 135W and a 130W GaN-on-SiC transistor for S-band radar applications haave been released. IGT3135M135 operates at the instantaneous operating frequency range of 3.1 to 3.5 GHz and IGT2731M130 operates at 2.7 to 3.1 GHz. Both products are 50 ohm matched high-power GaN HEMT transistors and depletion-mode devices that require negative gate bias […]

High Power GaN/SiC Transistor

IGT5259CW25 is a fully-matched to 50 ohms RF power transistor that operates at 5.2 to 5.9 GHz of instantaneous operating frequency range with a minimum of 25W of output power and 36V drain bias. It features 12 dB of gain and 48% efficiency at CW conditions, and negative gate voltage and bias sequencing are required […]

Zero-in on the Best RF Transistor Technology for your Radar’s High Power Amplifier Designs

by Integra Technologies, Inc. The best solid-state, high power amplifiers (HPAs), especially those used in critical defense, aerospace, and weather-radar applications, start with the right choice of discrete or integrated RF power transistors. Several active device semiconductor technologies are available today to amplify pulsed and continuous-wave (CW) signals across narrow or wide bandwidths from HF/VHF/UHF […]

High Power L-Band Avionics Transistor

The IGN1011L1200 is a high power L-band avionics transistor featuring GaN-on-SiC HEMT technology. It offers 1.03 to 1.09 GHz of operating frequency, a minimum of 1200W of peak pulse power, 50V supply voltage, and 6.4% duty factor. With typical >17 dB gain and 75% efficiency, it is a GEN-2 device.   INTEGRA TECHNOLOGIES (8)

GaN/SiC RF Power Modules

A new line of ultra-efficient RF power modules offers a new level of integration that results in powerful yet simple, higher-level building blocks for creating SWaP-C optimized high power amplifiers (HPAs) found in pulsed and CW radar systems. Built-in functions can include RF matching, gate-pulsing and sequencing (GPS), output noise suppression, temperature compensation, and VSWR […]

GaN/SiC RF Power Transistor

The IGT5259CW25 is a fully-matched (to 50 ohms), GaN/SiC RF power transistor that is ideal for C-band continuous wave (CW) applications. It operates at the instantaneous frequency range of 5.2 to 5.9 GHz and offers a minimum of 25W of output power at 36V drain bias, featuring 12 dB of gain and 48% efficiency at […]