Home Tag "Qorvo"

GaN RF Power Transistor

The QPD0030 is a 45W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 4 GHz on a +48V supply rail. It is ideally suited for base station, radar, and communications applications, and can support both CW and pulsed mode of operations. The unit can be used in Doherty architecture for the final stage […]

Highly Integrated and Compact Multichip Modules for Defense Applications

by Rick Montgomery, senior product line director, Qorvo & Dean White, director of product solutions, Defense and Aerospace, Qorvo & Jon Alejandro, customer account manager, High Performance Solutions, Qorvo  Highly Integrated RF Modules from Smarphones to Defense Qorvo is known as a leader in providing highly integrated RF front end modules (FEMs) at multiple bands […]

GaN RF Input-Matched Transistor

The QPD1025L is a 1800W (P3dB) discrete GaN on SiC HEMT that operates from 0.96 to 1.215 GHz. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, and test instrumentation. The device can support both CW and pulsed operations. RoHS compliant. QORVO (13)

Wi-Fi Front End Module

The QPF4219 is an integrated front end module (FEM) designed for Wi-Fi 5 (802.11ac) systems. The compact form factor and integrated matching minimizes layout area in the applications. Covering 2400 to 2500 MHz, the unit integrates a 2.4 GHz power amplifier, regulator, SP2T switch, bypassable low noise amplifier, and DC power detector into a single […]

Qorvo® Wireless Technology Innovator Cees Links Inducted into Wi-Fi NOW Hall of Fame

Qorvo, a leading provider of innovative RF solutions that connect the world, today announced that company executive Cees Links has been recognized for his decades of advancing wireless technology by being inducted into the Wi-Fi NOW Hall of Fame. The honor is reserved for individuals who have made exceptional contributions to the Wi-Fi industry. Links […]

GaN Front End Module

GaN Front End Module The QPF4001 is a multi-function GaN MMIC front end module targeted for 28 GHz phased array 5G base stations and terminals. Fabricated on the company’s 0.15um GaN on SiC process, the device combines a low noise high linearity LNA, a low insertion-loss high-isolation TR switch, and a high-gain high-efficiency multi-stage PA. […]

Qorvo® to Acquire Active-Semi International

Qorvo, Inc., a leading provider of innovative RF solutions that connect the world, announced that it has entered into a definitive agreement to acquire Active-Semi International, Inc. (“Active-Semi”), a private fabless supplier of programmable analog power solutions. Active-Semi will become part of Qorvo’s Infrastructure and Defense Products (IDP) group. Active-Semi’s technologies are positioned to intersect […]

Qorvo® RF Fusion™ Wins Multiple Marquee Smartphone Designs

Qorvo®, a leading provider of innovative RF solutions that connect the world, has announced multiple new smartphone design wins utilizing the newest generation of its RF Fusion RF front end (RFFE) modules. With these latest wins, Qorvo now supports marquee product releases across leading smartphone manufacturers with highly integrated mid-/high-band module solutions. The newest RF […]

S-Band GaN Power Amplifier

QPA1001 is a high-power, S-band amplifier fabricated on the company’s QGaN25 0.25um GaN on SiC production process. Covering 3.1 to 3.5 GHz, the QPA1001 typically provides 48 dBm of saturated output power and 22 dB of large-signal gain while achieving 54% power-added efficiency. The unit can also support a variety of operating conditions to best […]

VFTT – Qorvo

Roger Hall, General Manager, High Performance Solutions Group, Qorvo MPD: The 2019 defense budget is chock full of EW, radar, and other programs with lots of RF and microwave content, so, if your company serves the defense market, what are your thoughts about how this will affect your business in the coming years? RH: Qorvo […]