Home Tag "Qorvo"

Asymmetric Doherty Power Device

The QPD2730 is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.575 to 2.635 GHz and can deliver PAVG of 36W at +48V operation. Applications include W-CDMA/LTE, macrocell base stations, and asymmetric Doherty applications. QORVO (7)

GaN Power Amplifier

Model TGA2218-SM is a packaged Ku-band, high power MMIC amplifier fabricated on the company’s production 0.15um GaN on SiC process. The unit operates from 13.4 to 16.5 GHz and provides greater than 12W of saturated output power with 23 dB of large signal gain and greater than 29% power-added efficiency (PAE). This high performance combination […]

GaAs/GaN Power Doubler Module

The RFCM3327 is a power doubler amplifier SMD module. The part employs GaAs pHEMT die and GaN HEMT die, has high output capability, and is operated from 45 to 1218 MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. QORVO (13)

Band 7 BAW Duplexer

The TQQ6107 is an exceptionally high performance BAW duplexer for Band 7. This filter is housed in a compact 2 x 2.5mm package. Low insertion loss, coupled with high attenuation, makes this filter an ideal choice for small cell BTS needs. This surface mount device features 70 MHz bandwidth and is RoHS compliant. QORVO (20)

The Evolution of GaN: from Defense Applications to 5G

by Scott Vasquez, Senior Market Strategy Leader – Qorvo As gallium nitride’s advantages (increased power density and efficiency, and improved thermal properties that enable higher reliability and operating temperature) are becoming increasingly cost-effective, the technology is no longer considered exclusive to defense programs such as electronic warfare and jammers. Plastic packaging technologies are just one […]

New 50W GaN Amplifier

Model QPA1000 is a high-power, S-band amplifier fabricated on the company’s QGaN25, 0.25um GaN on SiC production process. Covering 2.8 to 3.2 GHz, the QPA1000 typically provides 47 dBm of saturated output power and 22 dB of large-signal gain while achieving 58% power-added efficiency (PAE). The unit can also support a variety of operating conditions […]

Absorptive High Isolation SPST Switch

The QPC6014 is a Silicon on Insulator (SOI) single-pole single-throw (SPST) absorptive switch designed for use in cellular, 3G, LTE and other high performance communications systems. Operating from 5 to 6000 MHz, it offers high isolation with excellent linearity and power handling capability. No blocking capacitors are necessary on the RF ports. QORVO (18)

X-Band 100W GaN Power Amplifier

The TGM2635-CP is a packaged X-band, high power amplifier fabricated on the company’s production 0.25um GaN on SiC process. It operates from 7.9 to 11 GHz and provides 100W of saturated output power with 22.5 dB of large signal gain and greater than 35% PAE. Size is 19.05 x 19.05 x 4.52mm. QORVO (64)

GaN RF Transistor

The QPD1008L is a 125W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz with a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited for military and civilian radar, land mobile and military radio communications, wideband or narrowband amplifiers, jammers, […]

Qorvo® Wi-Fi Innovator Cees Links Honored with Golden Mousetrap Lifetime Achievement Award 

Qorvo® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, today announced that company executive Cees Links has been recognized for his significant contributions to the Wi-Fi industry with the prestigious Design News 2017 Golden Mousetrap Lifetime Achievement Award. Presented Feb.7 in Anaheim, California, the award honors an individual whose career has […]