Home Tag "Qorvo"

The Impact of the IoT Demystified

by Cees Links, GM of Qorvo Wireless Connectivity Business Unit The IoT (Internet of Things) is a modern-day buzzword with lofty expectations to have a profound impact on society. But what is it, how will we use it and what will that impact be? Is it exciting or will it be frightening? Will it be […]

Ultra-Low Noise, Flat Gain LNA

The QPL9503 is a flat gain, high linearity, ultra-low noise amplifier in a small 2 x 2mm surface mount package. It provides a gain flatness of 2 dB (peak-to-peak) over a wide bandwidth from 3 to 6 GHz. At 5.5 GH, the amplifier typically provides 21.6 dB gain, +35.5 dBm OIP3 at a 56mA bias […]

Qorvo® Multi-Channel IoT Transceiver is First Certified for Thread Protocol

System-on-Chip simultaneously supports Thread and ZigBee®, ensuring easy upgrades to tomorrow’s fully networked smart home   Qorvo® (Nasdaq:QRVO), a leading provider of innovative RF solutions that connect the world, today announced that its GP712 System-on-Chip is the first multi-channel Internet of Things (IoT) transceiver in the industry to be certified for the Thread protocol. With concurrent […]

DPDT Transfer Switch

The QPC6222 is a DPDT transfer switch designed for general purpose switching applications where RF port transfer (port swapping) control is needed. The low insertion loss along with excellent linearity performance makes it ideal for multi-mode GSM, EDGE, UMTS, and LTE applications. It covers 700 to 2700 MHz. QORVO (9)

Design of a Broadband L-band 160W GaN Power Amplifier Using SMT Packaged Transistors 

by  Plextek RFI & Qorvo The design of a broadband power amplifier for L-band radar and wideband communications applications is described. Using a state-of-the-art Qorvo transistor in a cost-effective SMT plastic package, the amplifier has 160W output power between 1.2GHz and 1.8GHz and a typical efficiency of 55% for the complete connectorized PA. Particular consideration […]

GaN RF Transistor

Model QPD1009 is a 15W (P3dB) wideband unmatched discrete GaN on SiC HEMT that operates from DC to 4 GHz and a 50V supply rail. The device is an industry standard 3x3mm plastic overmold package and can support pulsed, CW and linear operations. Applications include military and civilian radar, land mobile and military radio communications, […]

Asymmetric Doherty Power Device

The QPD2730 is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.575 to 2.635 GHz and can deliver PAVG of 36W at +48V operation. Applications include W-CDMA/LTE, macrocell base stations, and asymmetric Doherty applications. QORVO (17)

GaN Power Amplifier

Model TGA2218-SM is a packaged Ku-band, high power MMIC amplifier fabricated on the company’s production 0.15um GaN on SiC process. The unit operates from 13.4 to 16.5 GHz and provides greater than 12W of saturated output power with 23 dB of large signal gain and greater than 29% power-added efficiency (PAE). This high performance combination […]

GaAs/GaN Power Doubler Module

The RFCM3327 is a power doubler amplifier SMD module. The part employs GaAs pHEMT die and GaN HEMT die, has high output capability, and is operated from 45 to 1218 MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. QORVO (16)

Band 7 BAW Duplexer

The TQQ6107 is an exceptionally high performance BAW duplexer for Band 7. This filter is housed in a compact 2 x 2.5mm package. Low insertion loss, coupled with high attenuation, makes this filter an ideal choice for small cell BTS needs. This surface mount device features 70 MHz bandwidth and is RoHS compliant. QORVO (32)