Home Tag "RICHARDSON RFPD"

RF Power LDMOS 150W Transistor

Now available with full design support capabilities is a 150W peak power LDMOS transistor from NXP Semiconductors. The AFT31150N is designed for applications operating at frequencies between 2700 and 3100 MHz. It is suitable for use in pulse applications, and ideal for S-band radar systems.    RICHARDSON RFPD (102)

GaN Power Amplifier

Now available with full design support capabilities is a new GaN power amplifier from Analog Devices, Inc. The HMC8205BF10 delivers +45.5 dBm (35W) with 35% PAE across an instantaneous bandwidth of 0.3 to 6 GHz. No external matching is required to achieve full band operation, and no external inductor is required to bias the amplifier. […]

RF Transistor

Now available with full design support capabilities is a new RF power LDMOS transistor from NXP Semiconductors. The MRF13750H/MRF13750HS, in bolt-down and solder-down styles, is a 750W CW transistor designed for ISM applications in the 700 to 1300 MHz range. It is capable of CW or pulse power in narrowband operations. RICHARDSON RFPD (14)

SMT Diplexers for Small Cell/DAS

Now available with full design support capabilities is the DPX family of universal-footprint diplexers from CTS Corporation. These surface-mounted ceramic filters achieve impressive frequency-combining of closely spaced neighboring frequency bands, enabling antenna-sharing in multi-band small cells, DAS, and repeater systems. RICHARDSON RFPD (6)

Ultra-High Power Density LDMOS

Now available with full design support capabilities is a new RF power LDMOS transistor from NXP Semiconductors. The AFV10700H/AFV10700HS, available in bolt-down and solder-down styles, is designed for pulse applications operating at 1030 to 1090 MHz and can be used over the 960 to 1215 MHz band at reduced power. It outputs 700W P1dB at […]

Full-Bridge Evaluation Board

Now available with full design support capabilities is a new evaluation board from GaN Systems and Peregrine Semiconductor. The GS61004B-EVBCD evaluation board combines GaN Systems’ GaN E-HEMT with the ultra-fast PE29102 gate driver from Peregrine. Using this evaluation platform, designers can characterize the performance advantages that result from operating a Class D amplifier at a […]

Power Amplifier Module

Now available with full design support capabilities is a new power amplifier module from NewEdge Signal Solutions. The ETX115 delivers high gain and high power across a wide RF transmit bandwidth. This 2W, compact module can be used for a wide range of applications. It uses a single +12V supply. RICHARDSON RFPD (10)

Low Noise Amplifier Family

Now available with full design support is a product family of low noise amplifiers (LNAs) from WanTcom. They feature the company’s proprietary LNA technologies, high frequency microelectronics assembly techniques, and long-standing reputation for high reliability. RICHARDSON RFPD (9)

Three New Devices

Full design support capabilities are available for three new parts from Guerrilla RF, Inc. The GRF2013 is a broadband gain block with low noise figure and high linearity designed for small cell, wireless infrastructure and other high-performance applications. The GRF2081 is a broadband, linear, ultra-low noise amplifier. And the GRF5511 is a high-linearity power amplifier/linear […]

MRFX High-Power RF Transistor

Now available with full design support is a 65V, wideband RF power LDMOS transistor from NXP Semiconductors. The MRFX1K80H is the first product in NXP’s new MRFX series. It is designed to deliver 1800W CW at 65V for applications from 1.8 to 400 MHz and is capable of handling 65:1 VSWR. RICHARDSON RFPD (38)