1. Home
  2. In
  3. The
  4. News
  5. The Design of an L-band 125W GaN PA

The Design of an L-band 125W GaN PA


Plextek RFI has published a new white paper on its website, entitled ‘The Design of an L-band 125W GaN PA‘.

The white paper describes the design and evaluation of a single stage 125W L-Band GaN Power Amplifier using a low-cost packaged transistor. The amplifier is optimized for the 0.96 to 1.215 GHz band with a typical band center gain of 20dB and output power at P-3dB of +51dBm (125W) at a PAE (for the connectorised amplifier) of > 70%. The design is based on a commercially available discrete 0.25μm GaN transistor, housed in a metal-based ceramic package (the QPD1008 from Qorvo).