High Power L-Band Avionics Transistor

IGN1011L1200 is a GaN-on-SiC HEMT technology offering 1.03 to 1.09 GHz of operating frequency, a minimum of 1200W of peak pulse power, 50V supply voltage, and 6.4% duty factor. With typical >17 dB gain and 75% efficiency, the unit is a GEN-2 device. Assembled via chip and wire technology, utilizing gold metallization, it is housed in a metal-based package and sealed with a ceramic-epoxy lid.

INTEGRA TECHNOLOGIES

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