GaN-on-SiC Transistor for RF Energy

Now available with full design support is a new RF power GaN transistor from NXP Semiconductors. The MRF24G300HS is a 300W CW GaN transistor designed for ISM applications at 2450 MHz. It offers 73 percent drain efficiency at 2450 MHz and the high power density of GaN to reach high-output power in a small footprint.

RICHARDSON RFPD

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