The MwT-7F is a GaAs MESFET device whose normal 0.25 micron gate length and 250 micron gate width make it ideally suited to applications requiring high gain and medium linear power in the 500 MHz to 26 GHz frequency range. MwT-7F is equally effective for either wideband (e.g., 6 to 18 GHz) or narrowband applications. Processing which guarantees low phase noise makes the unit particularly attractive for oscillator applications. All chips are passivated with SiN (Silicon Nitride). Features include 21 dBm output power at 12 GHz, 15 dB small signal gain at 12 GHz, and choice of chip and three package types. Ideal for commercial, military, hi-rel space applications.