GaN-on-SiC MMICs and Discretes

New GaN RF power devices include MMICs covering 2 to 18 GHz, 12 to 20 GHz, and 12 to 20 GHz with 3 dB compression point, as well as bare die and packaged GaN MMIC amplifiers for S- and X-band with up to 60% power-added efficiency, and discrete HEMT devices covering DC to 14 GHz with P3dB RF output power up to 100 W and maximum efficiency of 70%.

MICROCHIP TECHNOLOGY

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