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GaN X-band RF Power Amplifier

GaN X-band RF Power Amplifier
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The Model SGN-X3-200 is a GaN RF power amplifier that consists of an input section with preamplifier stages and a power amplifier output section. The output section consists of the summation of six amplifiers. In addition to the microwave section, there is a proprietary asynchronous low-noise power supply and pulse-modulator. The amplifier is designed for use in radar, data links, communications, and test systems. Peak saturated power output is at least 250 W, amplitude flatness is 1 dB or less and amplitude at a pulse width of 100 µs is 1 dB or less. VSWR is 1.2:1 and the amplifier can withstand a mismatch of 2:1.

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