GaAs pHEMT MMIC Amplifiers
50
0
Three new GaAs pHEMT MMIC amplifiers target applications in the Q, V, and E-bands and are fabricated with WIN Semiconductors’ PP10-20 GaAs pHEMT technology that enables a wide range of millimeter-wave front-end functions and supports amplifier performance well into D-band. The ARF1208 low-noise amplifier operates from 37 to 59 GHz with a 2.5 dB noise figure and 26.5 dB of linear gain at 50 GHz.
(50)
tags: Altum RF
