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GaAs pHEMT MMIC Amplifiers

GaAs pHEMT MMIC Amplifiers
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Three new GaAs pHEMT MMIC amplifiers target applications in the Q, V, and E-bands and are fabricated with WIN Semiconductors’ PP10-20 GaAs pHEMT technology that enables a wide range of millimeter-wave front-end functions and supports amplifier performance well into D-band. The ARF1208 low-noise amplifier operates from 37 to 59 GHz with a 2.5 dB noise figure and 26.5 dB of linear gain at 50 GHz.

ALTUM RF

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