The TA1055 power amplifier module uses GaN transistor technology to achieve highly linear power with low distortion, or peak power at high efficiencies to meet any radio system’s requirements. This Class AB GaN can serve both military and commercial applications. It can support any signal type and modulation formats such as OFDM, DVB, and CW/AM/FM. Gain is 33 dB, gain flatness is less than 2 dB, input return loss is -12 dB, the operating voltage is +28 VDC at 2 A, and switching speed is 2 µs or less. The module is extremely rugged, which makes it well suited for harsh environments in which temperature, humidity, shock, and vibration are critical factors. Features include over, under, and reverse voltage protection, high-speed on/off control, a temperature output, and optional heatsink.