GaN RF Power Amplifier
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The CHA8312-99F is a two-stage GaN amplifier that operates from 8 to 12 GHz and provides 17 W output power, 50% power-added efficiency, and 26 dB of small signal gain. The part is fabricated with a 0.15-µm gate length GaN-on-SiC HEMT process and is available as a bare die. A DC bias voltage of 20 VDC at 320 mA is required and the chip measures 3.99 x 3.12 x 0.07 mm.
UNITED MONOLITHIC SEMICONDUCTORS
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