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700 W GaN on SiC HEMT Transistor

700 W GaN on SiC HEMT Transistor
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The CLL3H0914L-700 is a GaN-SiC HEMT optimized for radar implementations at frequencies of 960 to 1250 MHz, 1030 to 1090MHz, and 1200 to 1400 MHz where long pulse width and high-duty cycles are required. It delivers at least 700 W of peak output power from a single transistor at an operating voltage of 50 VDC with an efficiency greater than 70%, as well as a pulse width of 2 ms and a 20% duty cycle.

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