GaN Power Amplifier

The CGY2631UH is a GaN on Si RF power amplifier that operates from 6 to 18 GHz with a saturated output power of 2 W, gain of 20 dB, and PAE of 36%. This amplifier is manufactured using the company’s 100 nm gate length GaN-on-Si HEMT technology, has gold bonding pads and backside metallization, and is protected with silicon nitride passivation to obtain the highest level of reliability. The amplifier requires a supply of 12 VDC at less than 2 A.

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