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GaN RF Power Amplifier

GaN RF Power Amplifier
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The CMPA0060002F1-AMP is a GaN MMIC power amplifier that operates from DC to 6 GHz and delivers a saturated output power of 5.9 W with a small-signal gain of more than 16.8 dB and power-added efficiency of up to 39%. The amplifier is based on the company’s GaN-on-SiC HEMT technology and employs a distributed amplifier design approach that provides very wide bandwidths to be achieved in a small screw-down package with a copper-tungsten heat sink. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to silicon and GaAs transistors. The amplifier requires a DC supply of 28 V. The amplifier is available in a surface-mount package with flanges that measure 0.5 x 0.5 in. The operating temperature range is -40° C to 150° C, and typical applications include broadband amplifiers, fiber drivers, EMC amplifier drivers, and test equipment.

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