GaN 150 W Power Amplifiers

The GTH2r-1014150S is an L-band GaN-on-SiC amplifier that operates from 960 MHz to 1.4 GHz with a pulsed output power of 150 W at a 50 VDC bias, a saturated drain efficiency of over 72%, and pulse droop of 0.02 dB. The GTH2r-2731150S is an S-band amplifier that delivers 150 W of pulsed power at 50 VDC bias and has a saturated drain efficiency of more than 64% from 2.7 to 3.1 GHz. The devices are housed in 6-pin 6.5 x 7 mm DFN packages. The company also offers a wide range of devices for commercial wireless and many other applications, including CW amplifiers for systems operating in the ISM bands. Bare die versions of the amplifiers and evaluation boards are also available.

GALLIUM SEMICONDUCTOR

(16)