Millimeter-wave GaAs pHEMTs
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The PQG3-0C integrated millimeter-wave GaAs platform targets front ends and combines optimized E-mode low noise and D-mode power pHEMTs to enable amplifier and LNA performance. The E-mode/D-mode pHEMTs operate to 110 GHz and 90 GHz, respectively, and employ 0.15 µm gates fabricated by deep ultraviolet stepper technology.
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tags: Win Semiconductors
