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GaN RF Power Amplifier

GaN RF Power Amplifier
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The JA20006000P50 amplifier module operates from 2 to 6 GHz and delivers an output power of 100 W with a gain of 60 dB. The Class AB amplifier uses GaN-on-SiC transistors and is suitable for CW and pulsed waveforms. With a switching time of less than 4 µs, the amplifier ensures power saving during pulsed applications. It includes open/short load protection, supports forward/reflected power monitoring, and has spurious rejection of -60 dBc and third harmonic rejection of -20 dBc. It requires a DC supply of 28 V and consumes 20 A of current. The module measures 197 x 89 x 40 mm and can withstand shock and vibration according to MIL-STD-810F/G standards. It is well suited for radars, datalinks, jammers, and UAVs operating in the S and C bands.

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