The IGN0912S5000 and IGN0912S5000S GaN-on-SiC power transistors are high-performance devices that can deliver high power and efficiency at a wide range of frequencies. They are ideal for use in various applications, including transponder uplink/downlink and L-band avionics, IFF/SSR, TACAN, and DME avionics systems. They operate at 1030 MHz and can deliver more than 5 kW of output power (32 µs, 4% duty cycle pulse conditions), with gain of 19 dB and a drain efficiency of 73% from a 125 V supply voltage. They are available in a metal-based package that measures 1.265 x 0.395 in. and offer advantages over other types of power transistors, including higher power density, higher efficiency, lower noise, and longer lifetimes.