1. Home
  2. On The Market
  3. GaN-on-SiC Amplifier

GaN-on-SiC Amplifier

GaN-on-SiC Amplifier
54
0

The QPD1425L is a 375 W GaN on SiC HEMT that operates from 1.2 to 1.4 GHz with 56.3 dBm of saturated output power, 17 dB of large-signal gain, and 75% drain efficiency. The device supports CW and pulsed operation, bias is +65 VDC and the device is housed in an NI-400 package that measures 10.16 x 10.16 x 4.06 mm.

QORVO

(54)

print
tags:

LEAVE YOUR COMMENT