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2.7 GHz GaN Transistor

2.7 GHz GaN Transistor
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The MMRF5018HSR5 is an internally matched 50-VDC 100 W CW RF power transistor optimized for operation up to 2.7 GHz. Power gain is 17 dB, drain efficiency is 61%, maximum VSWR is 20:1 at all phase angles with no device degradation and maximum RF input power is 5 W peak.

NXP SEMICONDUCTORS

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