RF Front End Module
The MAMF-011099 transmit and receive front end module operates from 24.25 to 29.5 GHz and includes a low noise amplifier, power amplifier, switch, and switch driver. In the transmit path […]
Modelithics and MACOM Collaborate to Offer New Modelithics Enhanced, Highly-Accurate Power Divider, Coupler and Balun Models
Modelithics the leading provider of RF/microwave simulation models and MACOM Technology Solutions Inc. (MACOM), a leading supplier of semiconductor products, are pleased to announce the release of new models for […]
Double-balanced Mixer
The MAMX-011088-DIE is a passive double-balanced mixer MMIC that has an IF bandwidth of DC to 20 GHz, 8 dB of conversion loss, requires LO drive of +15 dBm, and […]
GaN Amplifier
The MAPC-S1504 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for 5.2 to 5.9 GHz operation. The device supports pulsed operation with peak output power levels […]
Modelithics Releases the Modelithics MACOM GaN Library v21.1.5
Modelithics, Inc., (Modelithics) the world’s leading RF and microwave simulation model provider, is pleased to announce version 21.1.5 of the Modelithics MACOM GaN Library. With this latest version, the library […]
Advanced Antenna Architectures and RF Semiconductors at the Intersection of SATCOM and 5G Technologies
by Doug Carlson, SVP & GM, RF & Microwave, MACOM The demand for high speed, broadband data connectivity continues unabated, and we are seeing revolutionary changes in fixed wired networks […]
VFTT – Macom
Doug Carlson, Senior Vice President and General Manager, RF & Microwave, MACOM MPD: The 2019 defense budget is chock full of EW, radar, and other programs with lots of RF […]
High Linearity Power Amplifier
The MAAP-010512 is a 4-stage, high linearity 1W power amplifier in a 7x7mm laminate package, allowing easy assembly. This PA product is fully matched to 50 ohms on both the […]
Wideband, SP3T PIN Diode Switch
The MASW-011029 is a wideband SP3T switch manufactured using the company’s patented AlGaAs PIN diode MMIC process, on a semi-insulating GaAs substrate. The device is fully passivated with silicon nitride […]
