High Power MMIC Amplifier
The QPA4264 GaN-on-SiC power amplifier operates between 37.5 and 42.5 GHz and delivers an RF output power of 5 W (10 W with 17% power-added efficiency) with IMD3 of 25 […]
20 W Millimeter-wave Power Amplifier
The QPA1724 MMIC amplifier delivers 20 W of saturated power from 17.3 to 21.2 GHz and is designed for both commercial and defense applications. Power-added efficiency is 27%, with 16 […]
IEEE 802.11ax Front Module
The QPF4516B front module integrates a 5 GHz power amplifier, regulator, SP2T switch, and low-noise amplifier and is designed for use in IEEE 802.11ax. It operates with a five VDC […]
Ka-band GaN RF Power Amplifier
The QPB3238N is a GaN spatially-combining MMIC RF power amplifier that operates between 32 and 38 GHz and is well suited as an alternative for TWTAs. It produces saturated output […]
2.7 to 3.8 GHz Variable Gain Amplifier
The QPA1008 is an S-band, two-stage variable gain driver amplifier housed in a 5 x 5 mm QFN package. It operates from 2.7 to 3.8 GHz and delivers a P1dB […]
GaN RF Input-Matched Transitor
The QPD1028 is a discrete GaN-on SiC HEMT that delivers P3dB RF output power of 750 W from 1.2 to 1.4 GHz with CW or pulsed signals. Linear gain is […]
X-band GaN SPDT Switch
The QPC2040 single-pole double-throw switch is fabricated using the company’s QGaN15 0.15 µm GaN on SiC process, operates from 8 to 12 GHz and can handle an RF input power […]
Gan MMIC Module
The QPM2637 is a GaN MMIC front-end module (FEM) that integrates a T/R switch and low-noise amplifier, and is designed for X-band radar applications between 9 and 10.5 GHz. The […]
GaAs pHEMT RF Amplifier IC
The QPL1816 single-ended RF amplifier is designed for broadband amplifiers and CATV systems such as optical receivers and low noise front ends. It operates between 50 MHz and 1.8 GHz […]
