GaN HEMT Die
The CGH60008D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift […]
Cree to Invest $1 Billion to Expand Silicon Carbide Capacity
As part of its long-term growth strategy, Cree, Inc. will invest up to $1 billion in the expansion of its silicon carbide capacity with the development of a state-of-the-art, automated […]
GaN HEMT RF Devices Deliver Wide Bandwidth Power Amplifier Performance
Wolfspeed & Powerful Microwave Develop Reference Design Circuit for Wide Bandwidth, Low Frequency (50 – 1,000 MHz) Power Amplifier by Ryan Baker, RF Product Marketing Manager, and Dr. Dominic FitzPatrick, […]